| 732 |
Youngbong Han, Hai Au Huynh and SoYoung Kim |
Pinwheel Meander-Perforated Plane Structure for Mitigating Power/Ground Noise in System-in-Package |
IEEE Transactions on Components, Packaging and Manufacturing Technology |
pp. 562-569, vol. 8, no. 4 |
201804 |
SCI |
ICDS |
| 731 |
Hai Au Huynh, Youngbong Han, Sanghyeok Park, Jisoo Hwang, Eunseok Song and SoYoung Kim |
Design and Analysis of the DC-DC Converter With a Frequency Hopping Technique for EMI Reduction |
IEEE Transactions on Components, Packaging and Manufacturing Technology |
pp. 546-553, vol. 8, no. 4 |
201804 |
SCI |
ICDS |
| 730 |
Soyeon Joo and SoYoung Kim |
Output-capacitor-free LDO design methodologies for high EMI immunity |
IEEE Transactions on Electromagnetic Compatibility |
pp. 497-506, vol. 60, no. 2 |
201804 |
SCI |
ICDS |
| 729 |
Soyeon Joo and SoYoung Kim |
PSR enhancement techniques for output-capacitor-free LDO regulator design |
Analog Integr. Circ. Sig. Process |
vol. 93, no. 2, pp. 319-327 |
201710 |
SCI |
ICDS |
| 728 |
Soyeon Joo, Jintae Kim, and SoYoung Kim |
Power-Supply Rejection Model Analysis of Capacitor-Less LDO Regulator Designs |
IEICE Transactions on Electronics |
Vol. E100-C, No. 5, pp. 504-512 |
201705 |
SCI-E |
ICDS |
| 727 |
JungHun Kim, Hai Au Huynh, and SoYoung Kim |
Modeling of FinFET Parasitic Source/Drain Resistance With Polygonal Epitaxy |
IEEE Transactions on Electron Devices |
Vol. 64, No. 5, pp.2072-2079, |
201705 |
SCI |
ICDS |
| 726 |
Hai Au Huynh, Jeong-Min Jo, Wansoo Nah, SoYoung Kim |
EMC Qualification Methodology for Semicustom Digital Integrated Circuit Design |
IEEE Transactions on Electromagnetic Compatibility |
pp. 1-13, vol. 53, no. 10 |
201610 |
SCI |
ICDS |
| 725 |
Ikchan Jang, Yoonmyung Lee, SoYoung Kim, Jintae Kim |
Power-Performance Tradeoff Analysis of CML-based High-Speed Transmitter Designs using Circuit-Level Optimization |
IEEE Transactions on Circuit and Systems - I |
pp. 540-550, vol. 63, no. 4 |
201604 |
SCI |
ICDS |
| 724 |
JinHyuk Jeong, Ho Lee, DongHae Kang, and SoYoung Kim |
Gate Engineering to Improve Effective Resistance of 28-nm High-k Metal Gate CMOS Devices |
IEEE Transactions on Electron Devices |
pp.259-264, vol.63, no.1 |
201601 |
SCI |
ICDS |
| 723 |
W.Lee, H.Kang, H. Lee, W. Lim, J. Bae, H. Koo, J. Yoon, K. Hwang, K. Lee, and Y. Yang |
Broadband Cascode InGaP/GaAs HBT Power Amplifier Integrated Circuit Using Cascode Structure and Optimized Shunt Inductor |
IEEE Transactions on Microwave Theory Techniques |
Early Access |
2019-11-04 |
SCI (IF:3.756, 22.83%) |
IC lab, MMIC, AAD, MCS |
